hi-sincerity microelectronics corp. spec. no. : mos200807 issued date : 2008.11.12 revised date :2009,12,15 page no. : 1/5 H2305N hsmc product specification H2305N H2305N pin assignment & symbol gate drain source 1 2 3 3-lead plastic sot-23 package code: n pin 1: gate 2: source 3: drain p-channel enhancement-mode mo sfet (-20v, -4.5a) features ? r ds(on) <58m @v gs =-4.5v, i d =-4.2a ? r ds(on) <71m @v gs =-2.5v, i d =-2a ? simple drive requirement ? small package outline ? isurface mount device description the advanced power mosfets from apec provide the desi gner with the best combination of fast switching low on-resistance and cost-effectiveness. the sot-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage, applications such as dc/dc converters. absolute maximum ratings (t a =25 o c, unless otherwise noted) symbol parameter ratings units v ds drain-source voltage -20 v v gs gate-source voltage 8 v id@ta=25 continuous drain current) -4.5 a id@ta=70 continuous drain current -3.5 a i dm drain current (pulsed) *1 -10 a p d total power dissipation @t a =25 o c 1.38 w t stg storage temperature range -55 to +150 c t j , operating junction temperature range -55 to +150 c *1: repetitive rating: pulse width limited by the maximum junction temperation. *2: 1-in 2 2oz cu pcb board
hi-sincerity microelectronics corp. spec. no. : mos200807 issued date : 2008.11.12 revised date :2009,12,15 page no. : 2/5 H2305N hsmc product specification electrical characteristics (t a =25 c, unless otherwise noted) symbol characteristic test c onditions min. typ. max. unit ? static bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v bvdss/ tj breakdown voltage temperature coefficient reference to 25 :, id=-1ma -0.1 v/: v gs =-4.5v, i d =-2.8a - 58 v gs =-2.5v, i d =-2a 71 r ds(on) drain-source on-state resistance v gs =-1.8v, i d =-1a - 108 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0. 45 v zero gate voltage drain current (tj=25oc) v ds =-20v, v gs =0v - -1 ua i dss zero gate voltage drain current (tj=55oc) v ds =-16v, v gs =0v - -10 ua i gss gate-body leakage current v gs = 8v, v ds =0v - - 100 na g fs forward transconductance v ds =-5v, i d =-2.8a - 9.0 - s ? drain-source diode characteristics v sd drain-source diode forward voltage v gs =0v, i s =-1.2a - - -1.2 v note: pulse test: pulse width 300us, duty cycle 2%
hi-sincerity microelectronics corp. spec. no. : mos200807 issued date : 2008.11.12 revised date :2009,12,15 page no. : 3/5 H2305N hsmc product specification characteristics curve 0 5 10 15 20 25 30 02468 vds,drain-to-source voltage(v) id,drain current ( ta=25 -2 v -1.5v -5v -4v -3v fig 1.typical output 0 5 10 15 20 25 30 02468 vds,drain-to-source voltage(v) id,drain current ta=150 -5v -4v -3v ( -2v fig 2.typical output -1.5v ch i i 40 45 50 55 60 65 70 123456 vgs, ga t e - t o - so ur c e vo l t a ge ( v) rds(on)(m 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 tj,junction temperature( ) normalized rds( id=-4.2a vgs=- 4 . 5 v o ? id=4.2a ta=25 fig 4.normalized on-resistance v.s.junction fig 3.on-resistance v.s.gate 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150 175 tj,junction temperature( ) vgs(th)( 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 vsd,source-to-drain voltage(v) is(a tj=150 tj=25 v ) fig 6.gate threshold voltage fig 5.forward characteristic of reverse
hi-sincerity microelectronics corp. spec. no. : mos200807 issued date : 2008.11.12 revised date :2009,12,15 page no. : 4/5 H2305N hsmc product specification sot-23 dimension dim min. max. a 2.80 3.04 b 1.20 1.60 c 0.89 1.30 d 0.30 0.50 g 1.70 2.30 h 0.013 0.10 j 0.085 0.177 k 0.32 0.67 l 0.85 1.15 s 2.10 2.75 v 0.25 0.65 *: typical, unit: mm marking: h j k d a l g v c b 3 2 1 s 23 pb free mark pb-free: " " (note) normal: none 05 note: pb-free product c an distinguish by the green label or the extra description on the right side of the label. pin style: 1.gate 2.source 3.drain material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 3-lead sot-23 plastic surface mounted package hsmc package code: n important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer prod uct design, infringement of paten ts, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454
hi-sincerity microelectronics corp. spec. no. : mos200807 issued date : 2008.11.12 revised date :2009,12,15 page no. : 5/5 H2305N hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices figure 1: temperature profile t p t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 t 25 o c to peak time temperature profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c 5 o c 10sec 1sec pb-free devices. 260 o c 5 o c 10sec 1sec
|
